全文获取类型
收费全文 | 135篇 |
免费 | 89篇 |
国内免费 | 10篇 |
专业分类
化学 | 22篇 |
晶体学 | 4篇 |
力学 | 1篇 |
综合类 | 3篇 |
物理学 | 204篇 |
出版年
2024年 | 1篇 |
2023年 | 4篇 |
2022年 | 12篇 |
2021年 | 18篇 |
2020年 | 11篇 |
2019年 | 4篇 |
2018年 | 6篇 |
2017年 | 18篇 |
2016年 | 17篇 |
2015年 | 6篇 |
2014年 | 25篇 |
2013年 | 11篇 |
2012年 | 10篇 |
2011年 | 13篇 |
2010年 | 8篇 |
2009年 | 8篇 |
2008年 | 10篇 |
2007年 | 9篇 |
2006年 | 6篇 |
2005年 | 8篇 |
2004年 | 2篇 |
2003年 | 5篇 |
2002年 | 2篇 |
2001年 | 3篇 |
2000年 | 2篇 |
1999年 | 2篇 |
1998年 | 3篇 |
1997年 | 3篇 |
1996年 | 2篇 |
1994年 | 2篇 |
1986年 | 1篇 |
1984年 | 2篇 |
排序方式: 共有234条查询结果,搜索用时 15 毫秒
1.
J. H. Lu Y. Y. Yang C. C. Chen C. H. Kuan H. T. Chen S. C. Lee 《Infrared Physics & Technology》2003,44(5-6):399-409
Superlattices have been demonstrated previously by our group in the design of the multicolor infrared photodetector. In general, the period number of the superlattice may be up to several dozens. In this paper, we have investigated the performance of the infrared photodetectors especially with 3, 5 and 15 periods. The detector structure contains a thick blocking barrier embedded between two superlattices with different period numbers but with the same well and barrier widths. This double-superlattice structure shows switchable spectral responses between two spectral regions by the voltage polarities. The photoresponse in each spectral region is also tunable by the magnitude of the applied voltage. The voltage-dependent behavior reveals the photoelectron relaxation and transport mechanism in the superlattice miniband. Superlattice with few periods has high electron group velocity, less relaxation effect and less collection efficiency. Therefore the superlattice with few periods may have better responsivity and narrower photoresponse range than the one with many periods. Based on the experimental results of our devices, it is observed that the superlattice with fewer periods has better detectivity, responsivity, wider range of the operational temperature, and more flexible miniband engineering than the conventional multiple quantum well infrared photodetector. 相似文献
2.
太赫兹半导体探测器研究进展 总被引:4,自引:0,他引:4
太赫兹(THz)探测器是THz技术应用的关键器件之一.基于半导体的全固态THz量子阱探测器(THzQWIP)具有探测响应速度快、制作工艺成熟、体积小和易集成等优点.文章简要介绍了THz探测器的分类和特点,重点介绍了THzQWIP的工作原理和研究进展. 相似文献
3.
Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions 总被引:1,自引:0,他引:1 下载免费PDF全文
In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide(β-FeSi2) as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices. 相似文献
4.
针对目前商用日盲紫外/可见光双谱段电晕探测仪对故障的判定效率低且容易受噪声干扰问题,本文提出了一种微弱日盲紫外电晕自动实时检测方法。在分析电晕目标和噪声时间域统计特性的基础上,该方法利用电晕目标在时间域连续的特点,首先完成灰度图像二值化、形态学膨胀等预处理,其次将N帧连续图像累加后阈值化,最后进行特征提取,获取电晕位置、面积等特征信息,实现电晕的自动实时检测。在完成设备辐射标定的基础上,可立即回溯得到故障的光子计数参考值。建立了该方法的探测概率、虚警率数学模型。将其在高速数字处理平台TMS320DM642上实现并输入测试视频,结果表明:在典型参数情况下该方法单次检测虚警概率为2.85×10-5,处理时间小于120 ms,可实现微弱日盲紫外电晕的实时检测。 相似文献
5.
Fiber‐Based Flexible All‐Solid‐State Asymmetric Supercapacitors for Integrated Photodetecting System 下载免费PDF全文
Xianfu Wang Bin Liu Rong Liu Qiufan Wang Xiaojuan Hou Prof. Di Chen Prof. Rongming Wang Prof. Guozhen Shen 《Angewandte Chemie (International ed. in English)》2014,53(7):1849-1853
Integrated nanodevices with the capability of storing energy are widely applicable and have thus been studied extensively. To meet the demand for flexible integrated devices, all‐solid‐state asymmetric supercapacitors that simultaneously realize energy storage and optoelectronic detection were fabricated by growing Co3O4 nanowires on nickel fibers, thus giving the positive electrode, and employing graphene as both the negative electrode and light‐sensitive material. The as‐assembled integrated systems were characterized by an improved energy storage, enhanced power density (at least by 1860 % enhanced) by improving the potential window from 0–0.6 V to 0—1.5 V, excellent photoresponse to white light, and superior flexibility of both the fiber‐based asymmetric supercapacitor and the photodetector. Such flexible integrated devices might be used in smart and self‐powered sensory, wearable, and portable electronics. 相似文献
6.
采用化学气相沉积法在云母衬底上制备了二维InSe纳米片, 研究了生长温度对二维InSe纳米片晶相、 形貌、 尺寸及厚度的影响. 构筑了基于二维InSe纳米片的光探测器并研究了其光探测性能, 结果表明, 在808 nm的近红外光辐照下, 其光响应度为1.5 A/W, 外量子效率为230%, 可探测度为3.1×10 8 Jones(1 Jones=1 cm·Hz 1/2·W -1), 上升和衰减时间分别为0.5 和0.8 s. 相似文献
7.
InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10−5 A cm−2 (on GaAs) and 4.8 × 10−6 A cm−2 (on GaSb) were measured. At the same temperature, specific detectivity (D*) figures of 1.2 × 1010 Jones (on GaAs) and 7.2 × 1010 Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers. 相似文献
8.
This paper considers the possibility of using tris--diketonate complexes of europium in polymethylmettacrylate as luminescent UV radiation converters for widening the range of spectral sensitivity of photodetectors (including TV ones). The absolute quantum yields of luminescence have been determined. Converters for the 220–380-nm range providing a quantum efficiency of the silicon photodiode and the CCD matrix in the UV range up to 40% of the efficiency at the maximum of the spectral characteristic have been devised. 相似文献
9.
Stanislav V. Averin Petr I. Kuznetzov Victor A. Zhitov Nikolai V. Alkeev 《Optical and Quantum Electronics》2007,39(3):181-192
Solar-blind MSM photodetectors based on the AlGaN heterostructures have been fabricated and investigated. The influence of
material properties on device parameters is discussed. Effect of different buffer layers on the detector performances has
been examined. Detectors exhibit low dark currents and high sensitivity within the range of 250–290 nm. Effect of optical
excitation energy on GaN-based MSM-detector performance is analyzed and discussed. At high excitation level the detector speed
of response is limited by the field screening caused by the space-charge of the holes. The impulse response of GaN-based MSM-detector
is compared favorably with GaAs MSM-device. 相似文献
10.
In0.3Ga0.7N metal-insulator-semiconductor (MIS) and metal-semiconductor (MS) surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed. 相似文献